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3 Phase 30A H Bridge Circuit Bldc Mosfet Driver

3 Phase 30A H Bridge Circuit Bldc Mosfet Driver

  • 3 Phase 30A H Bridge Circuit Bldc Mosfet Driver
  • 3 Phase 30A H Bridge Circuit Bldc Mosfet Driver
3 Phase 30A H Bridge Circuit Bldc Mosfet Driver
Product Details:
Place of Origin: China
Brand Name: JUYI
Model Number: JY12M
Payment & Shipping Terms:
Minimum Order Quantity: 1 set
Price: Negotiable
Packaging Details: PE bag+ carton
Delivery Time: 5-10 days
Payment Terms: T/T,L/C,Paypal
Supply Ability: 1000sets/day
Contact Now
Detailed Product Description
Drain-Source Voltage: 30 V Gate-Source Voltage: ±20V
Maximum Power Dissipation: 1.5W Pulsed Drain Current: 30A
Application: DC/DC Converter Color: Black
High Light:

bldc motor mosfet driver


3 phase bldc motor driver mosfet


mosfet driver circuit for bldc motor

JY12M N and P Channel 30V MOSFET for BLDC motor driver





The JY12M is the N and P Channel logic enhancement mode power field transistors
are produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface
mount package.


Device RDS(ON) MAX IDMAX(25ºC)
N-Channel 20mΩ@VGS=10V 8.5A
32mΩ@VGS=4.5V 7.0A
P-Channel 45mΩ@VGS=-10V -5.5A
85mΩ@VGS=-4.5V -4.1A

● Low Input Capacitance
● Fast Switching Speed

● Power Management
● DC/DC Converter
● DC Motor Control
● LCD TV & Monitor Display Inverter
● CCFL inverter


Absolute Maximum Ratings(Ta=25ºC Unless Otherwise Noted)

Parameter Symbol N Channel P Channel Unit
10 sec Steady 10 sec Steady
Drain Source Voltage VDSS 30 -30 V
Gate Source Voltage VDSS ±20 ±20
Drain Current
Ta=25 ºC ID 8.5 6.5 -7.0 -5.3 A
Ta=70 ºC 6.8 5.1 -5.5 -4.1
Pulsed Drain Current IDM 30 -30
Maximum Power
Ta=25 ºC PD 1.5 W
Ta=70 ºC 0.95
Operating Junction
TJ -55 to 150 ºC
Thermal Resistance
Junction to Ambient
RθJA 61 100 62 103 ºC/W
Thermal Resistance
Junction to Case
RθJC 15 15 ºC/W

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
VGS(th) Gate Threshold
VDS=VGS,ID=250uA N-Ch 1.0 1.5 3.0 V
VDS=VGS,ID=-250uA P-Ch -1.0 -1.5 -3.0
IGSS Gate Leakage
VDS=0V, VGS=±20V N-Ch ±100 nA
P-Ch ±100
IDSS Zero Gate Voltage
Drain Current
VDS=30V, VGS=0V N-Ch 1 uA
VDS=-30V, VGS=0V P-Ch -1
ID(ON) On-State Drain
VDS≥5V, VGS=10V N-Ch 20 A
VDS≤-5V, VGS=-10V P-Ch -20
RDS(ON) Drain-Source
VGS=10V,ID=7.4A N-Ch 15 20
VGS=-10V,ID=-5.2A P-Ch 38 45
VGS=4.5V,ID=6.0A N-Ch 23 32
VGS=-4.5V,ID=-4.0A P-Ch 65 85
VSD Diode Forward
IS=1.7A,VGS=0V N-Ch 0.8 1.2 V
IS=-1.7A,VGS=0V P-Ch -0.8 -1.2

3 Phase 30A H Bridge Circuit Bldc Mosfet Driver 0



3 Phase 30A H Bridge Circuit Bldc Mosfet Driver 1JY12M.pdf

Contact Details
Changzhou Bextreme Shell Motor Technology Co.,Ltd

Contact Person: Amigo Deng

Tel: +8618994777701

Send your inquiry directly to us (0 / 3000)


Address: No.38 Fenghuang road,Tianning district,Changzhou,Jiangsu,China.

Factory Address:No.28,Shunyuan road,Changzhou,Jiangsu,China.