|
| MOQ: | 1 set |
| Price: | Negotiable |
| Standard Packaging: | PE bag+ carton |
| Delivery Period: | 5-10 days |
| Payment Method: | T/T,L/C,Paypal |
| Supply Capacity: | 1000sets/day |
JY15M N Channel 40V Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY15M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 40V/130A, RDS(ON) ≤3.1mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Dynamic Characteristics
RG Gate Resistance
VGS=0V,VDS=0V,
f=1MHZ
1.45 Ω
Td(on) Turn‐on Delay Time
VDS=20V, RG=6Ω,
IDS =30A, VGS=10V,
RL=28Ω
18
ns
Tr Turn‐on Rise Time 15
Td(off) Turn‐off Delay Time 62
Tf Turn‐off Fall Time 35
CISS Input Capacitance
VGS=0V,
VDS=20V,
f=1.0MHz
4500
COSS Output Capacitance 790 pF
CRSS
Reverse Transfer
Capacitance
250
Qg Total Gate Charge
VDS=20V,ID=30A,
VGS=10V
78 85
Qgs Gate‐Source Charge 30 nC
Qgd Gate‐Drain Charge 24
DOWNLOAD JY15M USER MANUAL
Video
Video
Video
|
|
| MOQ: | 1 set |
| Price: | Negotiable |
| Standard Packaging: | PE bag+ carton |
| Delivery Period: | 5-10 days |
| Payment Method: | T/T,L/C,Paypal |
| Supply Capacity: | 1000sets/day |
JY15M N Channel 40V Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY15M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 40V/130A, RDS(ON) ≤3.1mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Dynamic Characteristics
RG Gate Resistance
VGS=0V,VDS=0V,
f=1MHZ
1.45 Ω
Td(on) Turn‐on Delay Time
VDS=20V, RG=6Ω,
IDS =30A, VGS=10V,
RL=28Ω
18
ns
Tr Turn‐on Rise Time 15
Td(off) Turn‐off Delay Time 62
Tf Turn‐off Fall Time 35
CISS Input Capacitance
VGS=0V,
VDS=20V,
f=1.0MHz
4500
COSS Output Capacitance 790 pF
CRSS
Reverse Transfer
Capacitance
250
Qg Total Gate Charge
VDS=20V,ID=30A,
VGS=10V
78 85
Qgs Gate‐Source Charge 30 nC
Qgd Gate‐Drain Charge 24
DOWNLOAD JY15M USER MANUAL
