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| Place of Origin: | China |
| Brand Name: | JUYI |
| Model Number: | JY16M |
| Minimum Order Quantity: | 1 set |
|---|---|
| Price: | Negotiable |
| Packaging Details: | PE bag+ carton |
| Delivery Time: | 5-10 days |
| Payment Terms: | T/T,L/C,Paypal |
| Supply Ability: | 1000sets/day |
| Drain-Source Voltage: | 600 V | Gate-Source Voltage: | ±30V |
|---|---|---|---|
| Maximum Power Dissipation: | 33W | Pulsed Drain Current: | 16A |
| Application: | Lighting | Shape: | Square |
| High Light: | n channel power mosfet,n channel mosfet high side switch,power mosfet motor controller |
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JY16M N Channel 600V TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Rating | Unit | |
| VDS | Drain-Source Voltage | 600 | V | |
| VGS | Gate-Source Voltage | ± 30 | V | |
| ID | Continuous Drain Current |
Tc=25ºC | 4 | A |
| Tc=100ºC | 2.9 | |||
| IDM | Pulsed Drain Current | 16 | A | |
| PD | Maximum Power Dissipation | 33 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 1.5 | ºC/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage |
VGS=0V,IDS=250uA | 600 | V | ||
| IDSS | Zero Gate Voltage Drain Current |
VDS=600V,VGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current |
VGS=± 30V,VDS=0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage |
VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source On-state Resistance |
VGS=10V,IDS=4A | 2.6 | 2.8 | Ω |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage |
VGS=0V,ISD=2A | 1.5 | V | ||
| Trr | Reverse Recovery Time | ISD=4A di/dt=100A/us |
260 | ns | ||
| Qrr | Reverse Recovery Charge | 1.5 | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V, f=1MHZ |
5 | Ω | ||
| Td(on) | Turn-on Delay Time | VDS=300V, RG=25Ω, IDS =4A, VGS=10V, |
15 | ns | ||
| Tr | Turn-on Rise Time | 48 | ||||
| Td(off) | Turn-off Delay Time | 28 | ||||
| Tf | Turn-off Fall Time | 35 | ||||
| CISS | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHz |
528 | pF | ||
| COSS | Output Capacitance | 72 | ||||
| CRSS | Reverse Transfer Capacitance |
9 | ||||
| Qg | Total Gate Charge | VDS=480V,ID=4A, VGS=10V |
16 | nC | ||
| Qgs | Gate-Source Charge | 3.5 | ||||
| Qgd | Gate-Drain Charge | 7.1 |
DOWNLOAD JY16M USER MANUAL
Contact Person: Amigo Deng
Tel: +8618994777701
Address: No.38 Fenghuang road,Tianning district,Changzhou,Jiangsu,China.
Factory Address:No.28,Shunyuan road,Changzhou,Jiangsu,China.
