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16A 33W Lighting JUYI N Channel Power Mosfet Controller Switch

16A 33W Lighting JUYI N Channel Power Mosfet Controller Switch

MOQ: 1 set
Price: Negotiable
Standard Packaging: PE bag+ carton
Delivery Period: 5-10 days
Payment Method: T/T,L/C,Paypal
Supply Capacity: 1000sets/day
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY16M
Drain-Source Voltage:
600 V
Gate-Source Voltage:
±30V
Maximum Power Dissipation:
33W
Pulsed Drain Current:
16A
Application:
Lighting
Shape:
Square
Highlight:

n channel power mosfet

,

n channel mosfet high side switch

,

power mosfet motor controller

Product Description

JY16M N Channel 600V  TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver

GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation


APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
 

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ± 30 V
ID Continuous Drain
Current
Tc=25ºC 4 A
Tc=100ºC 2.9
IDM Pulsed Drain Current 16 A
PD Maximum Power Dissipation 33 W
TJ TSTG Operating Junction and Storage Temperature
Range
-55 to +150 ºC
RθJC Thermal Resistance-Junction to Case 1.5 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage
VGS=0V,IDS=250uA 600 V
IDSS Zero Gate Voltage
Drain Current
VDS=600V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current
VGS=± 30V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage
VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance
VGS=10V,IDS=4A 2.6 2.8 Ω


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Drain-Source Diode Characteristics
VSD Diode Forward
Voltage
VGS=0V,ISD=2A 1.5 V
Trr Reverse Recovery Time ISD=4A
di/dt=100A/us
260 ns
Qrr Reverse Recovery Charge 1.5 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,
f=1MHZ
5 Ω
Td(on) Turn-on Delay Time VDS=300V,
R
G=25Ω,
I
DS =4A, VGS=10V,
15 ns
Tr Turn-on Rise Time 48
Td(off) Turn-off Delay Time 28
Tf Turn-off Fall Time 35
CISS Input Capacitance VGS=0V,
V
DS=25V,
f=1.0MHz
528 pF
COSS Output Capacitance 72
CRSS Reverse Transfer
Capacitance
9
Qg Total Gate Charge VDS=480V,ID=4A,
V
GS=10V
16 nC
Qgs Gate-Source Charge 3.5
Qgd Gate-Drain Charge 7.1


 

 

DOWNLOAD JY16M USER MANUAL

16A 33W Lighting JUYI N Channel Power Mosfet Controller Switch 0JY16M.pdf

products
PRODUCTS DETAILS
16A 33W Lighting JUYI N Channel Power Mosfet Controller Switch
MOQ: 1 set
Price: Negotiable
Standard Packaging: PE bag+ carton
Delivery Period: 5-10 days
Payment Method: T/T,L/C,Paypal
Supply Capacity: 1000sets/day
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY16M
Drain-Source Voltage:
600 V
Gate-Source Voltage:
±30V
Maximum Power Dissipation:
33W
Pulsed Drain Current:
16A
Application:
Lighting
Shape:
Square
Minimum Order Quantity:
1 set
Price:
Negotiable
Packaging Details:
PE bag+ carton
Delivery Time:
5-10 days
Payment Terms:
T/T,L/C,Paypal
Supply Ability:
1000sets/day
Highlight

n channel power mosfet

,

n channel mosfet high side switch

,

power mosfet motor controller

Product Description

JY16M N Channel 600V  TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver

GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation


APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
 

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ± 30 V
ID Continuous Drain
Current
Tc=25ºC 4 A
Tc=100ºC 2.9
IDM Pulsed Drain Current 16 A
PD Maximum Power Dissipation 33 W
TJ TSTG Operating Junction and Storage Temperature
Range
-55 to +150 ºC
RθJC Thermal Resistance-Junction to Case 1.5 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage
VGS=0V,IDS=250uA 600 V
IDSS Zero Gate Voltage
Drain Current
VDS=600V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current
VGS=± 30V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage
VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance
VGS=10V,IDS=4A 2.6 2.8 Ω


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Drain-Source Diode Characteristics
VSD Diode Forward
Voltage
VGS=0V,ISD=2A 1.5 V
Trr Reverse Recovery Time ISD=4A
di/dt=100A/us
260 ns
Qrr Reverse Recovery Charge 1.5 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,
f=1MHZ
5 Ω
Td(on) Turn-on Delay Time VDS=300V,
R
G=25Ω,
I
DS =4A, VGS=10V,
15 ns
Tr Turn-on Rise Time 48
Td(off) Turn-off Delay Time 28
Tf Turn-off Fall Time 35
CISS Input Capacitance VGS=0V,
V
DS=25V,
f=1.0MHz
528 pF
COSS Output Capacitance 72
CRSS Reverse Transfer
Capacitance
9
Qg Total Gate Charge VDS=480V,ID=4A,
V
GS=10V
16 nC
Qgs Gate-Source Charge 3.5
Qgd Gate-Drain Charge 7.1


 

 

DOWNLOAD JY16M USER MANUAL

16A 33W Lighting JUYI N Channel Power Mosfet Controller Switch 0JY16M.pdf

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