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JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

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JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System
JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

Large Image :  JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

Product Details:
Place of Origin: China
Brand Name: JUYI
Model Number: JY11M
Payment & Shipping Terms:
Minimum Order Quantity: 5pcs
Price: Negotiable
Packaging Details: PE bag+carton
Delivery Time: 5-10days
Payment Terms: L/C, T/T
Supply Ability: 100000 pcs per month

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

Description
Brand: JUYI Model: JY11M
High Light:

JY11M

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BLDC Motor Driver IC 100V

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110A BLDC Motor Driver IC

JY11M 

N Channel Enhancement Mode Power MOSFET


By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence of these attributes renders this design exceptionally efficient and dependable for power switching applications, as well as for a diverse range of other use cases. Get more details please click here.

General Description

The JY11M is a cutting-edge semiconductor device that incorporates advanced trench processing techniques. This innovative design achieves a remarkable cell density, effectively reducing on-resistance and achieving a high repetitive avalanche rating. These outstanding features make the JY11M exceptionally efficient and reliable for power switching applications, as well as a diverse range of other use cases.

With a voltage rating of 100V and a current rating of 110A, the JY11M offers excellent performance. It boasts a low on-resistance (RDS(ON)) of 6.5mΩ at a gate-source voltage (VGS) of 10V, ensuring efficient power switching operations. The device also features fast switching and reverse body recovery, enabling quick and efficient switching operations.

Moreover, the JY11M is fully characterized in terms of avalanche voltage and current, ensuring reliable operation under extreme conditions. Its excellent package design facilitates effective heat dissipation, enhancing the overall reliability and longevity of the device.

In summary, the JY11M is an advanced semiconductor that combines a high cell density, minimized on-resistance, and a high repetitive avalanche rating. These qualities make it an exceptionally efficient and dependable choice for power switching applications, as well as for various other use cases where robust performance is required.

Features

● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

Applications
 

● Switching application
● Hard switched and high frequency circuits

● Power Management for Inverter Systems

 

PIN Description

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System 0

To-220-3 Package Outline

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System 1

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System 2

Pictures

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Contact Details
Changzhou Bextreme Shell Motor Technology Co.,Ltd

Contact Person: Mr. Amigo Deng

Tel: +86-18994777701

Fax: 86-519-83606689

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